论文标题
Sral $ _2 $ SI $ _2 $的大型不饱和磁性，弱反定位和非平凡的拓扑状态
Large nonsaturating magnetoresistance, weak anti-localization and non-trivial topological states in SrAl$_2$Si$_2$
论文作者
论文摘要
我们使用Magnetotransport实验与第一原则计算一起探索单晶Sral $ _2 $ _2 $的电子和拓扑特性。我们发现温度依赖性电阻率在50 K附近显示出明显的峰值。我们在低温下观察到一些显着的特征，例如大型非饱和磁场，Shubnikov-de HAAS振荡和尖锐的磁电磁性。在2 K和12 t时，磁倍率的最大值为459 \％。磁导率中类似尖尖的特征的分析表明，明确的抗位置抗位置的签名。我们的大厅电阻率测量证实了Sral $ _2 $ si $ _2 $的两种类型的电荷载体，其载体密度低。
We explore the electronic and topological properties of single crystal SrAl$_2$Si$_2$ using magnetotransport experiments in conjunction with first-principle calculations. We find that the temperature-dependent resistivity shows a pronounced peak near 50 K. We observe several remarkable features at low temperatures, such as large non-saturating magnetoresistance, Shubnikov-de Haas oscillations and cusp-like magneto-conductivity. The maximum value of magnetoresistance turns out to be 459\% at 2 K and 12 T. The analysis of the cusp-like feature in magneto-conductivity indicates a clear signature of weak anti-localization. Our Hall resistivity measurements confirm the presence of two types of charge carriers in SrAl$_2$Si$_2$, with low carrier density.
