论文标题
电场诱导的磁性触觉转化以实现自发山谷极化
Electric-field induced magnetic-anisotropy transformation to achieve spontaneous valley polarization
论文作者
论文摘要
Valleytronics已广泛研究为未来信息编码和处理提供新的自由度。在这里，有人提出通过电场诱导的磁各向异性（MA）变换来实现山谷极化。通过第一原则计算，我们的想法通过$ \ mathrm {vsi_2p_4} $单层的具体示例来说明。增加的电场可以通过将磁各向异性能量（MAE）从负面变为正值，从而诱导MA从平面向外的过渡到平面，这主要是由于磁晶偏增加了磁晶型分（MCA）能量。平面外磁化是有利于$ \ mathrm {vsi_2p_4} $中的自发谷极化。在被考虑的电场范围内，$ \ mathrm {vsi_2p_4} $始终是铁磁（FM）基态。在一定范围的电场中，半导体和平面磁化的共存使$ \ mathrm {vsi_2p_4} $成为真正的Ferrovalley（FV）材料。可以在$ \ mathrm {vsi_2p_4} $的情况下观察到异常的山谷大厅效应（AVHE）。我们的作品为通过电场设计Ferrovalley材料铺平了道路。
Valleytronics has been widely investigated for providing new degrees of freedom to future information coding and processing. Here, it is proposed that valley polarization can be achieved by electric field induced magnetic anisotropy (MA) transformation. Through the first-principle calculations, our idea is illustrated by a concrete example of $\mathrm{VSi_2P_4}$ monolayer. The increasing electric field can induce a transition of MA from in-plane to out-of-plane by changing magnetic anisotropy energy (MAE) from negative to positive value, which is mainly due to increasing magnetocrystalline anisotropy (MCA) energy. The out-of-plane magnetization is in favour of spontaneous valley polarization in $\mathrm{VSi_2P_4}$. Within considered electric field range, $\mathrm{VSi_2P_4}$ is always ferromagnetic (FM) ground state. In a certain range of electric field, the coexistence of semiconductor and out-of-plane magnetization makes $\mathrm{VSi_2P_4}$ become a true ferrovalley (FV) material. The anomalous valley Hall effect (AVHE) can be observed under in-plane and out-of-plane electrical field in $\mathrm{VSi_2P_4}$. Our works pave the way to design the ferrovalley material by electric field.
