论文标题

有前途的天基材料中的界面混合效果:铁磁Mn $ _4 $ n

Interfacial Mixing Effect in a Promising Skyrmionic Material: Ferrimagnetic Mn$_4$N

论文作者

Ma, Chung T., Zhou, Wei, Kirby, Brian J., Poon, S. Joseph

论文摘要

元素的界面混合是在薄膜沉积中发现的一种众所周知的现象。对于薄膜磁异质结构,界面成分不均匀性可能会对所得功能产生巨大影响。因此,必须注意表征旨在用于设备使用的薄膜的组成和磁性。最近,由于表现出垂直的磁各向异性,高域壁迁移率和良好的热稳定性,铁磁Mn $ _4 $ n $ n薄膜引起了极大的兴趣。在这项研究中,我们采用X射线光电子光谱(XPS)和偏振中子反射仪(PNR)测量来研究以450 $^{\ circe} $ c的表现生长的MGO/MGO/MN $ _4 $ _4 $ _4 $ N/PT TRILAYER沉积的界面。 XPS在两个接口处揭示了接近5 nm的元素混合区的厚度。使用PNR,我们发现这些接口在室温下基本上表现出零净磁化。尽管在450 $^{\ Circ} $ C处的高温沉积,但混合区的厚度与在室温下沉积的磁性膜中观察到的厚度相当。微磁模拟表明,这种界面混合不应阻止与最近的实验一致的小型天空的稳健形成。在将热稳定的Mn $ _4 $ N集成到将来的Spintronic设备中的潜力方面,获得的结果令人鼓舞。

Interfacial mixing of elements is a well-known phenomenon found in thin film deposition. For thin-film magnetic heterostructures, interfacial compositional inhomogeneities can have drastic effects on the resulting functionalities. As such, care must be taken to characterize the compositional and magnetic properties of thin films intended for device use. Recently, ferrimagnetic Mn$_4$N thin films have drawn considerable interest due to exhibiting perpendicular magnetic anisotropy, high domain-wall mobility, and good thermal stability. In this study, we employed X-ray photoelectron spectroscopy (XPS) and polarized neutron reflectometry (PNR) measurements to investigate the interfaces of an epitaxially-grown MgO/Mn$_4$N/Pt trilayer deposited at 450 $^{\circ}$C. XPS revealed the thickness of elemental mixing regions of near 5 nm at both interfaces. Using PNR, we found that these interfaces exhibit essentially zero net magnetization at room temperature. Despite the high-temperature deposition at 450 $^{\circ}$C, the thickness of mixing regions is comparable to those observed in magnetic films deposited at room temperature. Micromagnetic simulations show that this interfacial mixing should not deter the robust formation of small skyrmions, consistent with a recent experiment. The results obtained are encouraging in terms of the potential of integrating thermally stable Mn$_4$N into future spintronic devices.

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