论文标题
新型隧道晶体管的理论模型
Theoretical model of a new type tunneling transistor
论文作者
论文摘要
正在考虑使用无异性结构的隧道晶体管，或者通过屏障电位通过屏障电位进行了更精确控制的电子电流传输。 源隧道的传导带中的电子通过通道的禁忌$ e_g $到排水管的传导带。示例Inas-inas-inas，au-gase-au和al-aln-al-Al结构在氦气温度下进行的隧道$ j $计算表明，对于恒定的源电压电压（$ v_c $），几mV的$ v_c $，门电压的变化，$ v_g $，$ v_g $，用于0- $ $ $ $ $ $ 2E的电压范围内的通道$ v_g $，均为$ 2E $ 2E $ 2E。与现有的解决方案（例如隧道现场效应 - 横向器（TFET））不同，所提出的设备使用$ v_g $（栅极电压）的更改，即通道中静电电位的变化，以修改想象中的波动vector $ k_z $ k_z的隧道电流电子电子。因此，栅极电压控制电子波函数的阻尼力，从而控制隧道电流的大小，即$ j $。还测试了温度升高对$ J（V_G）$关系的影响。发现只有在具有较大禁令差距的结构中，这种效果微不足道（至少达到t = 300 k）。
A tunneling transistor without heterojunction as a theoretical design, or more precisely controlled electron current transmission by barrier potential, is under consideration. The electrons from the conduction band of the source tunnel through the forbidden gap $E_g$ of the channel to the conduction band of the drain. The tunneling current $J$ calculations made at helium temperature for the example InAs-InAs-InAs, Au-GaSe-Au and Al-AlN-Al structures show that for a constant source-drain voltage, $V_C$, of several mV, changes in the gate voltage, $V_G$, applied to the channel within the voltage range of 0 - $E_g/$2e change $J$ by even 10 orders of magnitude. Unlike the existing solutions such as tunnel field-effect-transistor (TFET), the proposed device uses the change of $V_G$ (gate voltage), i.e. the change of the electrostatic potential in the channel, to modify the imaginary wave vector $k_z$ of tunnel current electrons. Consequently, the gate voltage controls the damping force of the electrons wave functions and thus the magnitude of the tunneling current, $J$. The effect of increasing temperature, T, on $J(V_G)$ relation was also tested. It was found that only in structures with a wide forbidden channel gap this effect is insignificant (at least up to T=300 K).
