论文标题
CUFES中电子和孔的低能特性$ _2 $
Low-energy Properties of Electrons and Holes in CuFeS$_2$
论文作者
论文摘要
抗磁性半导体cufes $ _2 $属于磁对称类别，该类别对Spintronics应用感兴趣。此外，它的晶体晶格与Si兼容，使其与非磁性半导体结构相结合。因此，我们通过找到有效的$ \ boldsymbol {k} \ cdot \ boldsymbol {p} $ hamiltonian用于电子和孔带来研究这种材料。我们将此描述基于\ textIt {ab intio}计算并通过其对称性对电子带进行分类。结果，我们发现cufes $ _2 $表现出自旋极化的带和异常的大厅效果。最后，我们建议使用回旋共振来验证我们提出的有效质量张量最小值和价带最大值。
The antiferromagnetic semiconductor CuFeS$_2$ belongs to a magnetic symmetry class that is of interest for spintronics applications. In addition, its crystal lattice is compatible with Si, making it possible to integrate it with non-magnetic semiconducting structures. Therefore, we investigate this material by finding the effective $\boldsymbol{k}\cdot\boldsymbol{p}$ Hamiltonian for the electron- and hole bands. We base this description on \textit{ab initio} calculations and classify the electronic bands by their symmetry. As a result, we find that CuFeS$_2$ exhibits spin-polarized bands and an anomalous Hall effect. Finally, we suggest using cyclotron resonance to verify our proposed effective mass tensors at the conduction band minimum and valence band maximum.
