论文标题
使用域壁运动揭示W/COFEB/MGO超薄膜中的纳米级障碍
Revealing nanoscale disorder in W/CoFeB/MgO ultra-thin films using domain wall motion
论文作者
论文摘要
超薄磁性膜中的疾病会显着阻碍域壁运动。基于高效的域壁设备的路径上的主要问题之一仍然是纳米级固定景观的表征。在本文中，我们研究了w/cofeb/mgo薄膜中的域壁运动，其垂直磁各向异性通过在400 $^{\ circ} $ c上退火而结晶而结晶，并基于He $^{+} $ iRADIATION的过程结合了升高的温度。对于整个样品，磁性特性相似，而磁性域壁迁移率在辐照样品中进行了严重改善。通过使用分析模型提取纳米级固定参数，我们揭示了结晶样品疾病的重要变化。这项工作提供了一个独特的机会，可以选择性地分析障碍对域壁动力学的影响，而无需磁性变化的贡献。我们的结果强调了根据域壁运动设计设备时评估材料纳米级固定参数的重要性，而作为域壁运动，这可能是探测超薄磁性膜中该疾病的强大工具。
Disorder in ultra-thin magnetic films can significantly hinder domain wall motion. One of the main issues on the path towards efficient domain wall based devices remains the characterization of the pinning landscape at the nanoscale. In this paper, we study domain wall motion in W/CoFeB/MgO thin films with perpendicular magnetic anisotropy crystallized by annealing at 400$^{\circ}$C and a process based on He$^{+}$ irradiation combined with elevated temperatures. Magnetic properties are similar for the whole series of samples, while the magnetic domain wall mobility is critically improved in the irradiated samples. By using an analytical model to extract nanoscale pinning parameters, we reveal important variations in the disorder of the crystallized samples. This work offers a unique opportunity to selectively analyze the effects of disorder on the domain wall dynamics, without the contribution of changes in the magnetic properties. Our results highlight the importance of evaluating the nanoscale pinning parameters of the material when designing devices based on domain wall motion, which in return can be a powerful tool to probe the disorder in ultra-thin magnetic films.
