论文标题
氧气环境中的硼硝基 - 格拉烯平面内六边形异质结构
Boron nitride-graphene in-plane hexagonal heterostructure in oxygen environment
论文作者
论文摘要
为了改善硝酸硼和石墨烯（H-BNG）侧面异质结构的制造方案，我们研究了H-BNG薄膜在铂上的生长及其在氧气环境中的行为。我们采用了基于晚期光谱和成像技术的表面科学方法来研究每个反应步骤中表面化学计量和化学中间体的演变。在温度升高的氧气暴露期间，我们观察到氧的进行性和随后的插入，以及对石墨烯的选择性蚀刻，并伴随着硼的氧化。此外，通过在250°C下利用对石墨烯的O2蚀刻性选择性并重复生长循环，我们在没有使用连续转移程序的情况的情况下获得了具有可控成分的平面内H-BNG层，并垂直堆叠的H-BN/GR异质结构。使用单个前体分子的生长可能有益于电子设备的多功能原子薄层。
Aiming to improve fabrication protocols for boron nitride and graphene (h-BNG) lateral heterostructures, we studied the growth of h-BNG thin films on platinum and their behavior in an oxygen environment. We employed a surface science approach based on advanced spectroscopy and imaging techniques to investigate the evolution of surface stoichiometry and chemical intermediates at each reaction step. During oxygen exposure at increasing temperatures, we observed progressive and subsequent intercalation of oxygen, and selective etching of graphene accompanied by the oxidation of boron. Additionally, by exploiting the O2 etching selectivity towards graphene at 250°C and repeating growth cycles, we obtained in-plane h-BNG layers with controllable compositions and vertically stacked h-BN/Gr heterostructures without the use of consecutive transfer procedures. The growth using a single precursor molecule can be beneficial for the development of versatile atomically thin layers for electronic devices.
