论文标题
优化成核层以在CVD生长石墨烯上整合铁电hzo
Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene
论文作者
论文摘要
铁电石墨烯惰性表面上的铁电HF0.5ZR0.5O2（HZO）的直接整合具有挑战性。在这里，研究了使用成核层促进HzO的原子层沉积。通过DC溅射将不同的金属沉积为成核层。将空气氧化以形成亚化学计量的氧化物的Ta与PT进行了比较，PT提供了更稳定的电极。对于较厚的中间层，TA导致HZO膜的不稳定切换行为。相反，在较小的厚度下，可以使用氧化的TA中间层实现较高的PR。在这两种情况下，PT都具有更高的耐力。中间层的选择可能在很大程度上取决于所需的应用。
Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was investigated. Different metals were deposited as nucleation layers via dc sputtering. Ta, which oxidizes in air to form a sub-stoichiometric oxide, was compared to Pt, which offers a more stable electrode. For thicker interlayers, Ta leads to unstable switching behavior of the HZO film. Conversely, at smaller thicknesses, a higher Pr can be achieved with an oxidized Ta interlayer. In both cases, Pt offers higher endurance. The choice of interlayer may strongly depend on the required application.
