论文标题
在电流诱导的抗铁磁NIO/PT的转换中识别域壁自旋结构
Identifiying the domain wall spin structure in current-induced switching of antiferromagnetic NiO/Pt
论文作者
论文摘要
对抗铁磁域壁的理解是具有不同néel秩序取向的域之间的界面，是一个至关重要的方面，可以使使用抗磁性材料作为未来的Spintronic设备中的活性元素。在这项工作中，我们证明，在抗铁磁性中，可以通过电流脉冲驱动的切换来产生圆形圆形结构域结构。生成的域是T域，由一个域壁彼此隔开，其旋转指向两个T域的平均方向，而不是两个平面的公共轴。有趣的是，对于整个圆形域而言，该方向是相同的，表明没有强大的Lifshitz不变。可以通过MGO基板诱导的Nio薄膜中的应变分布来对域壁进行微磁性建模，从而偏离大量各向异性。从我们的测量值中，我们确定域壁宽度的最大宽度为$δ= 98 \ pm 10 $ nm，表明强烈限制。
The understanding of antiferromagnetic domain walls, which are the interface between domains with different Néel order orientations, is a crucial aspect to enable the use of antiferromagnetic materials as active elements in future spintronic devices. In this work, we demonstrate that in antiferromagnetic NiO/Pt bilayers circular domain structures can be generated by switching driven by electrical current pulses. The generated domains are T-domains, separated from each other by a domain wall whose spins are pointing toward the average direction of the two T-domains rather than the common axis of the two planes. Interestingly, this direction is the same for the whole circular domain indicating the absence of strong Lifshitz invariants. The domain wall can be micromagnetically modeled by strain distributions in the NiO thin film induced by the MgO substrate, deviating from the bulk anisotropy. From our measurements we determine the domain wall width to have a full width at half maximum of $Δ= 98 \pm 10$ nm, demonstrating strong confinement.
