论文标题
生产横截面不确定性可以解释宇宙氟异常吗？
Can the Production Cross-Section Uncertainties Explain the Cosmic Fluorine Anomaly?
论文作者
论文摘要
由硼与碳比（B/C）代表的宇宙射线（CRS）的稳定的次级频道比率是银河CR繁殖的主要探针。然而，由B/C推断出的CR扩散系数预测的氟与丝硅比（F/SI）显着高于AMS-02的最新测量。这种异常通常归因于F生产横截面的不确定性。在这项工作中，我们对这种解释进行了仔细的测试。我们考虑了四个不同的横截面参数模型。每个模型都受到最新的横截面数据的约束。我们使用相同的繁殖框架进行B/C，F/SI和横截面数据的合并拟合。两个横截面模型具有良好的整体良好性，可与$χ^2/n_ {d.o.f。} \ sim1 $。但是，横截面零件的拟合优度很差，$χ^2 _ {\ rm {cs}}}/n _ {\ rm {cs}}} \ gtrsim2 $用于这些模型。最适合的F生产横截面系统上大于测量值，而B生产的拟合横截面系统地低于测量值。这表明F异常几乎无法通过横截面测量的随机误差或现有横截面模型之间的差异来解释。然后，我们提出，空间依赖的扩散模型可以有助于一致地解释B/C和F/SI。在此模型中，NE-SI组的平均扩散系数预计将大于C-O组的平均扩散系数。
The stable secondary-to-primary flux ratios of cosmic rays (CRs), represented by the boron-to-carbon ratio (B/C), are the main probes of the Galactic CR propagation. However, the fluorine-to-silicon ratio (F/Si) predicted by the CR diffusion coefficient inferred from B/C is significantly higher than the latest measurement of AMS-02. This anomaly is commonly attributed to the uncertainties of the F production cross sections. In this work, we give a careful test to this interpretation. We consider four different cross-section parametric models. Each model is constrained by the latest cross-section data. We perform combined fits to the B/C, F/Si, and cross-section data with the same propagation framework. Two of the cross-section models have good overall goodness of fit with $χ^2/n_{d.o.f.}\sim1$. However, the goodness of fit of the cross-section part is poor with $χ^2_{\rm{cs}}/n_{\rm{cs}}\gtrsim2$ for these models. The best-fitted F production cross sections are systematically larger than the measurements, while the fitted cross sections for B production are systematically lower than the measurements. This indicates that the F anomaly can hardly be interpreted by neither the random errors of the cross-section measurements nor the differences between the existing cross-section models. We then propose that the spatially dependent diffusion model could help to explain B/C and F/Si consistently. In this model, the average diffusion coefficient of the Ne-Si group is expected to be larger than that of the C-O group.
