论文标题
金属基质上的单层cri $ _3 $中的强dzyaloshinskii-moriya互动
Strong Dzyaloshinskii-Moriya Interaction in Monolayer CrI$_3$ on Metal Substrates
论文作者
论文摘要
Dzyaloshinskii-Moriya相互作用（DMI）是实现真实空间手性旋转纹理的主要机制，这些机制被认为是下一代旋转型的关键组成部分。但是，DMI来自自旋轨道相互作用的扰动项，通常在原始磁性半导体中弱。迄今为止，在严格条件下，仅在几种材料中实现了大型DMI和最终的天空。使用第一原理计算，我们证明了在二维（2D）磁性半导体Cri $ _3 $ $ _3 $ $ _3 $ $ _3 $ $ _3 $ $ _3 $ $ _3 $之间的近邻居CR原子之间出现显着的DMI。这种异常强的DMI是由界面电荷转移和铬卤化物和金属底物之间的弱化学相互作用产生的，这破坏了空间反演对称性。这些发现突出了2D磁铁中底物效应的重要性，并扩展了具有强DMI的可行材料的清单。
Dzyaloshinskii-Moriya interaction (DMI) is the primary mechanism for realizing real-space chiral spin textures, which are regarded as key components for the next-generation spintronics. However, DMI arises from a perturbation term of the spin-orbit interaction and is usually weak in pristine magnetic semiconductors. To date, large DMI and the resulting skyrmions are only realized in a few materials under stringent conditions. Using first-principles calculations, we demonstrate that significant DMI occurs between nearest-neighbor Cr atoms in two-dimensional (2D) magnetic semiconductor CrI$_3$ on Au or Cu substrates. This exceptionally strong DMI is generated by the interfacial charge transfer and weak chemical interactions between chromium halides and metal substrates, which break the spatial inversion symmetry. These findings highlight the significance of substrate effects in 2D magnets and expand the inventory of feasible materials with strong DMI.
