论文标题

硅T中心设备的内存和转导前景

Memory and transduction prospects for silicon T centre devices

论文作者

Higginbottom, Daniel B, Asadi, Faezeh Kimiaee, Chartrand, Camille, Ji, Jia-Wei, Bergeron, Laurent, Thewalt, Michael L. W., Simon, Christoph, Simmons, Stephanie

论文摘要

T中心是一种具有电信带光学转换和长寿命的微波盘的硅本地旋转光子界面,为光学量子记忆和微波电信带到光学电信频段转导提供了一个吸引人的新平台。可以在这样的平台上实现广泛的量子内存和转导方案,其优点和缺点依赖于集成属性。在这项工作中,我们表征了T Center Spinembles为设备设计提供信息。我们执行第一个t集合的光学深度测量,并计算有效的光学量子记忆所需的中心密度或共振光学增强的改善。我们通过连贯的种群捕获(CPT)和Autler-Townes分裂(ATS)进一步证明了连贯的微波界面。然后,我们确定此类合奏的最有希望的微波和光学量子存储协议。通过估计自由空间和腔内存在的记忆效率,我们表明,通过预测密度,有效的光学记忆是可能的。最后,我们制定了一项转变建议,并讨论可实现的效率和忠诚度。

The T centre, a silicon-native spin-photon interface with telecommunications-band optical transitions and long-lived microwave qubits, offers an appealing new platform for both optical quantum memory and microwave to optical telecommunications band transduction. A wide range of quantum memory and transduction schemes could be implemented on such a platform, with advantages and disadvantages that depend sensitively on the ensemble properties. In this work we characterize T centre spin ensembles to inform device design. We perform the first T ensemble optical depth measurement and calculate the improvement in centre density or resonant optical enhancement required for efficient optical quantum memory. We further demonstrate a coherent microwave interface by coherent population trapping (CPT) and Autler-Townes splitting (ATS). We then determine the most promising microwave and optical quantum memory protocol for such ensembles. By estimating the memory efficiency both in free-space and in the presence of a cavity, we show that efficient optical memory is possible with forecast densities. Finally, we formulate a transduction proposal and discuss the achievable efficiency and fidelity.

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