论文标题
与墨西哥帽子分散剂的二维材料中的准结合状态和共振偏差散射
Quasi-bound States and Resonant Skew Scattering in Two-Dimensional Materials with a Mexican-Hat Dispersion
论文作者
论文摘要
二维材料中带电子的墨西哥帽子分散吸引了很多兴趣,这主要是由于带边缘附近状态密度的范·霍夫(Van Hove)奇异性。在本文中,我们表明这种分散剂还有另一个特征,这也导致了非平凡的影响。它包括一个事实,即在中央极端附近的动量空间中有效质量的迹象与该地区以外的质量相反。因此,排斥外部地区的准粒子的任何局部潜力都会吸引中央区域的准颗粒,从而创造出准结合的状态。我们研究这些状态在墨西哥帽子分散剂由于倒立电子和孔带的杂交而形成的情况下,并且电势是由点缺陷产生的。发现了与准结合状态相对应的局部密度的共振的能量和宽度,并且表明在某些条件下,准结合状态可以在带状态的连续体中转变为结合状态。准结合状态的存在导致电子的自旋依赖性散射。由于结合了准的状态,对于谐振能量的电子,偏斜的散射强烈增强,并且偏度角在较大范围内取决于能量。另外,在一定的能量范围内,散射抑制的非平凡作用出现在与偏斜角相反的方向上。
Mexican-hat dispersion of band electrons in two-dimensional materials attracts a lot of interest, mainly due to the Van Hove singularity of the density of states near the band edge. In this paper, we show that there is one more feature of such a dispersion, which also leads to nontrivial effects. It consists in the fact that the sign of the effective mass in the momentum space near the central extremum is opposite to the sign of the mass outside this region. For this reason, any localized potential that repels quasiparticles in the outer region attracts quasiparticles in the central region and thereby creates quasi-bound states. We study these states in the case when the Mexican-hat dispersion is formed due to the hybridization of the inverted electron and hole bands, and the potential is created by a point defect. The energy and width of the resonance of the local density of states corresponding to a quasi-bound state are found, and it is shown that, under certain conditions, a quasi-bound state can transform into a bound state in a continuum of band states. The presence of quasi-bound states leads to nontrivial effects in the spin-dependent scattering of electrons. Due to the quasi-bound state, the skew scattering is strongly enhanced for electrons with energy near the resonance, and the skewness angle varies over a wide range depending on the energy. In addition, in a certain energy range, a nontrivial effect of scattering suppression appears in the direction opposite to the skewness angle.