论文标题
基于多层石墨烯超材料的可调多态Terahertz开关
Tunable Multistate Terahertz Switch Based on Multilayered Graphene Metamaterial
论文作者
论文摘要
我们提出了基于等离子效应的窄带可调节的Terahertz开关,由多层石墨烯超材料组成。尽管以前报道了基于超材料的几种Terahertz光学开关,但这些开关的制造过程复杂,可调性有限和调制深度低。我们设计并模拟了巧妙的四个和八个状态Terahertz光学开关设计,可用于使用有限差分时间域模拟技术来实现多模模或成像。通过在不同层中施加电压来改变图案化石墨烯层的化学势来调整这些结构的等离子明亮模式和透明度区域。这些结构表现出频率高的调制深度和调制度,低插入损失,高光谱对比度,狭窄的带宽和高极化灵敏度。此外,与先前报道的Terahertz开关相比,我们提出的简单制造过程将使这些结构更可行。计算出的调制深度为98.81%和98.71%,对于四个和八个状态Terahertz开关的频率的最大调制度分别为〜61%和〜29.1%。透明模式和光谱对比比之间透明区域的最大透射率分别为95.9%和〜96%。对于四个和八个状态Terahertz开关,最大插入损失分别为0.22 dB和0.22 dB和0.33 dB。我们的发现将有助于开发用于数字开关的超薄石墨烯的多态光子设备,在Terahertz制度中传感。
We proposed plasmonic effect based narrow band tunable terahertz switches consisting of multilayered graphene metamaterial. Though several terahertz optical switches based on metamaterials were previously reported, these switches had complicated fabrication processes, limited tunability, and low modulation depths. We designed and simulated ingenious four and eight state terahertz optical switch designs that can be functional for multimode communication or imaging using the finite-difference time-domain simulation technique. The plasmonic bright modes and transparency regions of these structures were adjusted by varying the chemical potential of patterned graphene layers via applying voltage in different layers. The structures exhibited high modulation depth and modulation degree of frequency, low insertion loss, high spectral contrast ratio, narrow bandwidth, and high polarization sensitivity. Moreover, our proposed simple fabrication process will make these structures more feasible compared to previously reported terahertz switches. The calculated modulation depths were 98.81% and 98.71%, and maximum modulation degree of frequencies were ~61% and ~29.1% for four and eight state terahertz switches, respectively. The maximum transmittance in transparency regions between bright modes and the spectral contrast ratio were enumerated to be 95.9% and ~96%, respectively. The maximum insertion losses were quite low with values of 0.22 dB and 0.33 dB for four and eight state terahertz switches, respectively. Our findings will be beneficial in the development of ultra-thin graphene-based multistate photonic devices for digital switching, sensing in terahertz regime.