论文标题
GESN异质结构的量子自旋霍尔阶段
Quantum spin Hall phase in GeSn heterostructures on silicon
论文作者
论文摘要
固态电子系统的量子阶段看起来有准备维持外来现象和非常丰富的旋转物理学。我们提出了一种基于硅的实用结构，该体系结构自发地维持拓扑特性，同时与现代微电体铸造厂的大量制造能力完全兼容。在这里，我们展示了如何将GE1-XSNX合金（IV组半导体组）设计为可以证明差距损坏的连接处。我们预测这种基本的构建块会经历量子相变，该量子相变可以优雅地适应SI上的栅极控制的手性边缘状态。这将使诱人的前景设计用于托管量子旋转厅绝缘子和高级拓扑功能的集成电路。
Quantum phases of solid-state electron systems look poised to sustain exotic phenomena and a very rich spin physics. We propose a practical silicon-based architecture that spontaneously sustains topological properties, while being fully compatible with the high-volume manufacturing capabilities of modern microelectronic foundries. Here we show how Ge1-xSnx alloys, an emerging group IV semiconductor, can be engineered into junctions that demonstrate a broken gap alignment. We predict such basic building block undergo a quantum phase transition that can elegantly accommodate the existence of gate-controlled chiral edge states directly on Si. This will enable tantalizing prospects for designing integrated circuits hosting quantum spin hall insulators and advanced topological functionalities.
