论文标题
线性离子晶体中的角度射击两倍的门
Angle-robust Two-Qubit Gates in a Linear Ion Crystal
论文作者
论文摘要
在被困的离子量子计算机中，通过应用旋转依赖性力来生成两倍的纠缠门，该力使用声子介导离子内部状态之间的相互作用。为了在波动的实验参数下维持高保真性的两分门，在存在动作模式频率漂移的情况下，应用了强大的脉冲设计方法来消除残留的自旋运动纠缠。在这里，我们提出了一种改进的脉冲设计方法，该方法还可以通过将脉冲与模式频率漂移的角度相反的敏感性相反，从而确保了两数分旋转角度对均匀模式频率漂移的鲁棒性。我们通过实验测量了设计的门的性能，并在均匀模式频率偏移量下的门忠诚度和栅极性能方面有所改善。
In trapped-ion quantum computers, two-qubit entangling gates are generated by applying spin-dependent force which uses phonons to mediate interaction between the internal states of the ions. To maintain high-fidelity two-qubit gates under fluctuating experimental parameters, robust pulse-design methods are applied to remove the residual spin-motion entanglement in the presence of motional mode frequency drifts. Here we propose an improved pulse-design method that also guarantees the robustness of the two-qubit rotation angle against uniform mode frequency drifts by combining pulses with opposite sensitivity of the angle to mode frequency drifts. We experimentally measure the performance of the designed gates and see an improvement on both gate fidelity and gate performance under uniform mode frequency offsets.
