论文标题
六角硼氮化硼的量子发射极激活的阴极发光监测
Cathodoluminescence monitoring of quantum emitter activation in hexagonal boron nitride
论文作者
论文摘要
在二维材料中局部激活或生成量子发射器的能力对于实现综合量子光子设备的实现具有重要意义。特别是，最近已证明六角硼（HBN）允许在所需位置获取量子发射器的多种技术。在这里，我们使用阴极发光（CL）来监测HBN中电子束对颜色中心的局部激活。我们观察到CL信号在给定的表面剂量上饱和，与电子电流密度无关。基于光致发光和光子相关性，我们表明光活动中心的数量与CL信号成正比，并且我们估计我们技术可以生成的量子发射器的最大密度。我们的结果提供了有关激活机制的见解，并可以帮助优化硝化氢硼中单个光子源的受控产生。
The ability to locally activate or generate quantum emitters in two-dimensional materials is of major interest for the realization of integrated quantum photonic devices. In particular, hexagonal boron nitride (hBN) has recently been shown to allow a variety of techniques for obtaining quantum emitters at desired locations. Here, we use cathodoluminescence (CL) to monitor in situ the local activation of color centers by an electron beam in hBN. We observe that the CL signal saturates at a given surface dose, independently of the electron current density. Based on photoluminescence and photon correlations, we show that the number of photoactive color centers is proportional to the CL signal, and we estimate the maximum density of quantum emitters that can be generated by our technique. Our results provide insights about the activation mechanism and could help to optimize the controlled generation of single photon sources in hexagonal boron nitride.
