论文标题
110 GHz，110 MW杂种硅氯尼替奈德·马赫·齐汉德调节器
110 GHz, 110 mW Hybrid Silicon-Lithium Niobate Mach-Zehnder Modulator
论文作者
论文摘要
具有高光学功率处理能力的高带宽，低压电气调节器对于改善模拟光学通信和RF光子链路的性能很重要。在这里，我们设计并制造了薄膜硅锂（LN）Mach-Zehnder调制器（MZM），该调制器（MZM）可以处理110 MW的高光功率，而在1550 nm处的3-DB带宽大于110 GHz。该设计不需要蚀刻薄膜LN，并且使用粘合LN形成的混合光学模式来平面化硅光子波导电路。通过仔细缩小基础Si波导以减少光学生成的载体的影响，同时保持高调制效率，可以实现MZM中高的光电处理能力。 MZM的$v_πl$产品为3.1 V $。$ CM，芯片光学插入损失为1.8 dB。
High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. The design does not require etching of thin-film LN, and uses hybrid optical modes formed by bonding LN to planarized silicon photonic waveguide circuits. A high optical power handling capability in the MZM was achieved by carefully tapering the underlying Si waveguide to reduce the impact of optically-generated carriers, while retaining a high modulation efficiency. The MZM has a $V_πL$ product of 3.1 V$.$cm and an on-chip optical insertion loss of 1.8 dB.
