论文标题

库仑杂质对魔术角扭曲双层石墨烯的电子结构的影响

Effect of Coulomb impurities on the electronic structure of magic angle twisted bilayer graphene

论文作者

Ramzan, Muhammad Sufyan, Goodwin, Zachary A. H., Mostofi, Arash A., Kuc, Agnieszka, Lischner, Johannes

论文摘要

在石墨烯中,带电的缺陷打破了电子孔对称性,当缺陷电荷超过与费米速度成比例的临界值时,甚至可以产生异国情调的崩溃状态。在这项工作中,我们研究了使用紧密结合计算的带电缺陷的扭曲双层石墨烯(TBLG)的电子特性。像单层石墨烯一样,TBLG在费米水平附近表现出线性带,但在魔法角度(约1.1°)附近的费米速度急剧降低。这表明魔术角tblg中缺陷电荷的临界值也应该很小。我们发现带电的缺陷导致TBLG低能电子结构的显着变化。根据Moiré单位电池中的缺陷位置,可以打开带隙或诱导低能价和传导带的额外扁平化。我们的计算表明,两个单层的崩溃状态在扭曲的双层中杂交。然而,由于莫伊尔晶格的长度尺度不同,单层倒塌状态波构件的长度不同,因此它们的面内定位在很大程度上不受其他扭曲层的影响。这些预测可以在扫描隧道光谱实验中进行测试。

In graphene, charged defects break the electron-hole symmetry and can even give rise to exotic collapse states when the defect charge exceeds a critical value which is proportional to the Fermi velocity. In this work, we investigate the electronic properties of twisted bilayer graphene (tBLG) with charged defects using tight-binding calculations. Like monolayer graphene, tBLG exhibits linear bands near the Fermi level but with a dramatically reduced Fermi velocity near the magic angle (approximately 1.1°). This suggests that the critical value of the defect charge in magic-angle tBLG should also be very small. We find that charged defects give rise to significant changes in the low-energy electronic structure of tBLG. Depending on the defect position in the moiré unit cell, it is possible to open a band gap or to induce an additional flattening of the low-energy valence and conduction bands. Our calculations suggest that the collapse states of the two monolayers hybridize in the twisted bilayer. However, their in-plane localization remains largely unaffected by the presence of the additional twisted layer because of the different length scales of the moiré lattice and the monolayer collapse state wavefunctions. These predictions can be tested in scanning tunnelling spectroscopy experiments.

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