论文标题
固有和外在的侧跳散射诱导的自旋霍尔在N种植型PT中的脱离
Disentanglement of intrinsic and extrinsic side-jump scattering induced spin Hall effect in N-implanted Pt
论文作者
论文摘要
5D过渡金属和合金中自旋轨道耦合引起的自旋霍尔效应（SHE）的快速发展，在设计低功率，强大和非挥发性磁性记忆的发展方面取得了巨大的进步。最近的研究，将氧，氮和硫等非金属较轻的元素纳入5D过渡金属，显示出由于修改后的SHE而导致的阻尼样扭矩效率θ_DL的增强，但这种增强的机制尚不清楚。在本文中，我们在不同的温度（100-293 K）下研究θ_dl，以解散N植入PT的内在和外部侧跳散射诱导的自旋霍尔效应。当植入剂量从2*10^16离子/cm2增加到1*10^17离子/cm2时，我们观察到固有到外部侧跳机理的交叉。内在自旋厅电导率的突然下降与侧跳的增加导致她的效率相抵消。这些结果得出的结论是，研究θ_DL作为植入剂量的函数，也是温度的函数，对于理解促成SHE的物理机制很重要，到目前为止，在将非金属元素掺入5D过渡金属中。
The rapidly evolving utilization of spin Hall effect (SHE) arising from spin-orbit coupling in 5d transition metals and alloys have made giant strides in the development of designing low-power, robust and non-volatile magnetic memory. Recent studies, on incorporating non-metallic lighter elements such as oxygen, nitrogen and sulfur into 5d transition metals, have shown an enhancement in damping-like torque efficiency θ_DL due to the modified SHE, but the mechanism behind this enhancement is not clear. In this paper, we study θ_DL at different temperatures (100-293 K) to disentangle the intrinsic and extrinsic side-jump scattering induced spin Hall effect in N-implanted Pt. We observe a crossover of intrinsic to extrinsic side-jump mechanism as the implantation dose increases from 2*10^16 ions/cm2 to 1*10^17 ions/cm2. A sudden decrease in the intrinsic spin Hall conductivity is counterbalanced by the increase in the side-jump induced SHE efficiency. These results conclude that studying θ_DL as a function of implantation dose, and also as a function of temperature, is important to understand the physical mechanism contributing to SHE, which has so far been unexplored in incorporating non-metallic element in 5d transition metals.
