论文标题
缺乏平面反转对称性的两种薄拓扑结晶绝缘子
Two-atom-thin topological crystalline insulators lacking out of plane inversion symmetry
论文作者
论文摘要
这里证明了具有单个晶胞(U.C.)厚度的二维拓扑结晶绝缘子(TCI)。为此,第一个表明四方($ c_4 $平面)对称不是有限厚度的TCI平板上创建零能量的金属表面状态的必要条件,因为即使零能量状态仍然存在,即使在所有规范的旋转旋转旋转式的旋转式旋转式的托架上,也可以完全使用旋转的托架保护 - 完全倒入了式拓扑。换句话说,该模型上的零能级不是(也不是受拓扑保护的)。此外,在批量汉密尔顿(Hamiltonian)中,距离零能量的零能量(在拓扑上受到保护),在几个离散的$ k- $点上进行有效的双重能量变性 - 在U.C.〜厚度极限上。 TCI Hamiltonian的手性质允许创建一个$ 2 \ times 2 $ Square Hamiltonian,其拓扑特性在散装和单个U.C.〜厚度极限上都非常不变。涉及Pfaffian的计算进一步保证了散装和U.C.-厚阶段的相同拓扑表征。这样,在特此部署了一个两种厚度的TCI,以证明拓扑阶段的体积和两个维度。
A two-dimensional topological crystalline insulator (TCI) with a single unit cell (u.c.) thickness is demonstrated here. To that end, one first shows that tetragonal ($C_4$ in-plane) symmetry is not a necessary condition for the creation of zero-energy metallic surface states on TCI slabs of finite-thicknesses, because zero-energy states persist even as all the in-plane rotational symmetries--furnishing topological protection--are completely removed. In other words, zero-energy levels on the model are not due to (nor are they protected by) topology. Furthermore, effective twofold energy degeneracies taking place at few discrete $k-$points away from zero energy in the bulk Hamiltonian--that are topologically protected--persist at the u.c.~thickness limit. The chiral nature of the bulk TCI Hamiltonian permits creating a $2\times 2$ square Hamiltonian, whose topological properties remarkably hold invariant at both the bulk and at the single u.c.~thickness limits. The identical topological characterization for bulk and u.c.-thick phases is further guaranteed by a calculation involving Pfaffians. This way, a two-atom-thick TCI is deployed hereby, in a demonstration of a topological phase that holds both in the bulk, and in two dimensions.