论文标题
从根本上理解和解决Rowhammer
Fundamentally Understanding and Solving RowHammer
论文作者
论文摘要
我们提供了困扰现代DRAM(动态随机内存访问)芯片的Rowhammer漏洞中最新发展和未来方向的概述,这些芯片几乎在所有计算系统中用作主要内存。 Rowhammer是一种现象,在这种现象中,在实际DRAM芯片中反复访问一排会导致物理附近的行中的位Fllips(即数据腐败)。自2014年原始Rowhammer纸以来,这种现象导致了严重且广泛的系统安全漏洞。对Rowhammer现象的最新分析表明,随着DRAM技术扩展的继续,该问题越来越严重:在设备和电路水平上,较新的DRAM芯片从根本上更容易受到Rowhammer的影响。对Rowhammer的更深入分析表明,该问题有许多维度,因为脆弱性对许多变量敏感,包括环境条件(温度\&电压),过程变化,存储的数据模式以及内存访问模式和内存控制策略。因此,事实证明,它很难完全安全,并且非常高效(即性能,能源,区域的低头)保护机制对Rowhammer的保护机制以及DRAM制造商的尝试已被证明缺乏安全保证。 在回顾了利用,理解和减轻Rowhammer方面的各种最新发展之后,我们讨论了未来的方向,我们认为这对于解决Rowhammer问题至关重要。我们提出了两个主要方向,以扩大研究和发展工作:1)在现场部署的尖端DRAM芯片和计算系统中,对问题及其许多维度建立更深入的了解,以及2)通过系统成员合作设计和开发极其有效且完全确定的解决方案。
We provide an overview of recent developments and future directions in the RowHammer vulnerability that plagues modern DRAM (Dynamic Random Memory Access) chips, which are used in almost all computing systems as main memory. RowHammer is the phenomenon in which repeatedly accessing a row in a real DRAM chip causes bitflips (i.e., data corruption) in physically nearby rows. This phenomenon leads to a serious and widespread system security vulnerability, as many works since the original RowHammer paper in 2014 have shown. Recent analysis of the RowHammer phenomenon reveals that the problem is getting much worse as DRAM technology scaling continues: newer DRAM chips are fundamentally more vulnerable to RowHammer at the device and circuit levels. Deeper analysis of RowHammer shows that there are many dimensions to the problem as the vulnerability is sensitive to many variables, including environmental conditions (temperature \& voltage), process variation, stored data patterns, as well as memory access patterns and memory control policies. As such, it has proven difficult to devise fully-secure and very efficient (i.e., low-overhead in performance, energy, area) protection mechanisms against RowHammer and attempts made by DRAM manufacturers have been shown to lack security guarantees. After reviewing various recent developments in exploiting, understanding, and mitigating RowHammer, we discuss future directions that we believe are critical for solving the RowHammer problem. We argue for two major directions to amplify research and development efforts in: 1) building a much deeper understanding of the problem and its many dimensions, in both cutting-edge DRAM chips and computing systems deployed in the field, and 2) the design and development of extremely efficient and fully-secure solutions via system-memory cooperation.