论文标题
几乎匹配GAAS/PB（1-X）SN（X）TE Core-Shell纳米线的晶格
Nearly Lattice Matched GaAs/Pb(1-x)Sn(x)Te Core-Shell Nanowires
论文作者
论文摘要
我们研究了由分子束外延沉积在Wurtzite Gaas纳米线（NWS）侧壁上的PB（1-X）SN（X）SN（X）TE拓扑结晶绝缘子（NWS）的全部和半壳。由于IV-VI壳相对于III-V核的明显取向，因此沿纳米线轴的晶格不匹配小于4％。由于某些临界浓度的SN（X> = 0.4），选择了Pb（1-X）SN（X）TE实心溶液。 IV-VI壳具有从二进制SNTE，通过Pb（1-X）SN（X）TE的不同组合物生长，X值降低至二进制PBTE（X = 0）。样品通过扫描透射电子显微镜进行分析，该透射电子显微镜揭示了（110）或（100）方向的二进制PBTE，以及（100）Pb（1-X）SN（X）SN（X）SN（X）TE在Wurtzite GAAS NWS的侧壁上。
We investigate the full and half-shells of Pb(1-x)Sn(x)Te topological crystalline insulator deposited by molecular beam epitaxy on the sidewalls of wurtzite GaAs nanowires (NWs). Due to the distinct orientation of the IV-VI shell with respect to the III-V core the lattice mismatch along the nanowire axis is less than 4%. The Pb(1-x)Sn(x)Te solid solution is chosen due to the topological crystalline insulator properties for some critical concentrations of Sn (x >= 0.4). The IV-VI shells are grown with different compositions spanning from binary SnTe, through Pb(1-x)Sn(x)Te with decreasing x value down to binary PbTe (x = 0). The samples are analyzed by scanning transmission electron microscopy, which reveals the presence of (110) or (100) oriented binary PbTe and (100)Pb(1-x)Sn(x)Te on the sidewalls of wurtzite GaAs NWs.
