论文标题
量子点设备中均匀性的电控制
Electrical control of uniformity in quantum dot devices
论文作者
论文摘要
高度均匀的量子系统对于可扩展的量子处理器的实际实施至关重要。虽然基于半导体技术的量子点旋转矩形是用于大规模量子计算的有前途的平台，但它们的尺寸小，使其对当地环境特别敏感。在这里，我们提出了一种使用门电压特征的滞后移位，以电气获得内在电势景观中的高度均匀性。我们演示了数百毫伏的量子点设备中捏合电压的调整，至少保持稳定数小时。应用我们的方法，我们将柱塞门的捏合电压均匀地匀浆，以使四个量子点减少一个数量级。这项工作为调整量子点设备的调整提供了一种新工具，并为实现可扩展的自旋量子阵列提供了新的观点。
Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their small size makes them particularly sensitive to their local environment. Here, we present a method to electrically obtain a high degree of uniformity in the intrinsic potential landscape using hysteretic shifts of the gate voltage characteristics. We demonstrate the tuning of pinch-off voltages in quantum dot devices over hundreds of millivolts that then remain stable at least for hours. Applying our method, we homogenize the pinch-off voltages of the plunger gates in a linear array for four quantum dots reducing the spread in pinch-off voltage by one order of magnitude. This work provides a new tool for the tuning of quantum dot devices and offers new perspectives for the implementation of scalable spin qubit arrays.
