论文标题

两波段传导是Martensitic化合物GDPD2BI中非线性大厅效应的途径和不饱和的负磁性的途径

Two-band conduction as a pathway to non-linear Hall effect and unsaturated negative magnetoresistance in the martensitic compound GdPd2Bi

论文作者

Chatterjee, Snehashish, Giri, Saurav, Majumdar, Subham, Dutta, Prabir, Sadhukhan, Surasree, Kanungo, Sudipta, Chatterjee, Souvik, Patidar, Manju Mishra, Okram, Gunadhor Singh, Ganesan, V., Das, G., Rajaji, V.

论文摘要

目前的工作旨在通过对多晶样品的结构,磁,电气和热传输的全面研究,然后进行理论计算,以解决金属间化合物GDPD $ _2 $ bi的电子和磁性。我们的发现表明,磁接地态本质上是抗铁磁性的。磁转运数据呈现出突出的磁滞回路,暗示了结构过渡,并在特定的热量和热电器测量中进一步支持,但是在磁化研究中未观察到这种签名。依赖温度的粉末X射线衍射测量证实了从高温(HT)立方助母子的马氏体过渡到低温(LT)正晶(LT)正骨$ PMMA $结构的结构,类似于许多先前报道的形状存储合金。 HT到LT相变的特征是与突出的热磁滞有关的电阻率急剧增加。此外,我们观察到由$ a_ {orth} = \ sqrt {2} a_ {cub} $,$ b_ {orth} = a_ {cub} $和$ c_ {orth {orth {orth {orth} $ coby cout cout of $ a_ {orth} = \ sqrt {2} a_ {cub} $ c_ {orth} $ cultiant cubiagntion of Cutic和Orthorhombic晶格参数之间的强大贝因失真$ c $轴和沿$ a $轴的伸长率。该样品显示出一个不寻常的“非饱和” $ H^2 $依赖性的磁场的负磁场,高达150 koE。另外,在大约30 K下观察到霍尔电阻率的非线性场依赖性,这与Seebeck系数的标志变化一致。电子结构计算证实了LT和HT相中的强大金属状态。它表明费米表面的复杂性质以及电子和孔荷载体的存在。异常运输行为可能与电子和孔口袋的存在有关。

The present work aims to address the electronic and magnetic properties of the intermetallic compound GdPd$_2$Bi through a comprehensive study of the structural, magnetic, electrical and thermal transport on a polycrystalline sample, followed by theoretical calculations. Our findings indicate that the magnetic ground state is antiferromagnetic in nature. Magnetotransport data present prominent hysteresis loop hinting a structural transition with further support from specific heat and thermopower measurements, but no such signature is observed in the magnetization study. Temperature dependent powder x-ray diffraction measurements confirm martensitic transition from the high-temperature (HT) cubic Heusler $L2_1$ structure to the low-temperature (LT) orthorhombic $Pmma$ structure similar to many previously reported shape memory alloys. The HT to LT phase transition is characterized by a sharp increase in resistivity associated with prominent thermal hysteresis. Further, we observe robust Bain distortion between cubic and orthorhombic lattice parameters related by $a_{orth} = \sqrt{2}a_{cub}$, $b_{orth} = a_{cub}$ and $c_{orth} = a_{cub}/\sqrt{2}$, that occurs by contraction along $c$-axis and elongation along $a$-axis respectively. The sample shows an unusual `non-saturating' $H^2$-dependent negative magnetoresistance for magnetic field as high as 150 kOe. In addition, non-linear field dependence of Hall resistivity is observed below about 30 K, which coincides with the sign change of the Seebeck coefficient. The electronic structure calculations confirm robust metallic states both in the LT and HT phases. It indicates complex nature of the Fermi surface along with the existence of both electron and hole charge carriers. The anomalous transport behaviors can be related to the presence of both electron and hole pockets.

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