论文标题
减少了透明超导电子的ITO
Reduced ITO for Transparent Superconducting Electronics
论文作者
论文摘要
超导电子中的光吸收是对将光学组件与超导组件相结合的电路体系结构质量的主要限制。典型的超导材料（如niobium）的10 nm厚膜可吸收任何入射光辐射的一半以上。我们建议使用对系统其他地方使用的波长透明的超导体。在本文中，我们研究了减少的氧化二锡（ITO），作为电子产品的潜在透明超导体。我们制造并表征了还原含量氧化钛锡的超导电线。我们还表明，材料的$ \ si {10} {nm} $厚膜只能吸收约1-20 \％的光的500-1700 nm之间。
Absorption of light in superconducting electronics is a major limitation on the quality of circuit architectures that integrate optical components with superconducting components. A 10 nm thick film of a typical superconducting material like niobium can absorb over half of any incident optical radiation. We propose instead using superconductors which are transparent to the wavelengths used elsewhere in the system. In this paper we investigated reduced indium tin oxide (ITO) as a potential transparent superconductor for electronics. We fabricated and characterized superconducting wires of reduced indium tin oxide. We also showed that a $\SI{10}{nm}$ thick film of the material would only absorb about 1 - 20\% of light between 500 - 1700 nm.
