论文标题

识别6H-SIC中不同硅空位中心

Identification of different silicon vacancy centers in 6H-SiC

论文作者

Singh, Harpreet, Anisimov, Andrei N., Baranov, Pavel G., Suter, Dieter

论文摘要

碳化硅(SIC)中的硅空缺已被提议作为量子技术应用(例如量子传感和量子中继器)的有趣候选者。 SIC存在于许多具有不同平面堆叠序列的多型型中,并且在每个多型中,空缺都可以占据各种不同的晶格位点。在这项工作中,我们表征并确定了6H-SIC多型中最重要的三个充电硅空位。我们在不同的射频功率水平和不同温度下记录了光发光和连续波光学检测到的磁共振光谱。我们在低温下单独选择不同硅位置空位的零值线,并记录相应的光学检测到的磁共振(ODMR)光谱。 ODMR允许我们关联光学和磁共振光谱,从而解决了早期工作的争议。

Silicon vacancies in silicon carbide (SiC) have been proposed as interesting candidates for quantum technology applications such as quantum sensing and quantum repeaters. SiC exists in many polytypes with different plane stacking sequences, and in each polytype, the vacancies can occupy a variety of different lattice sites. In this work, we characterize and identify the three most important charged silicon vacancies in the 6H-SiC polytype. We record the photoluminescence and continuous-wave optically detected magnetic resonance spectra at different radio-frequency power levels and different temperatures. We individually select the zero-phonon lines of the different silicon vacancies at low temperatures and record the corresponding optically detected magnetic resonance (ODMR) spectra. ODMR allows us to correlate optical and magnetic resonance spectra and thereby resolve a controversy from earlier work.

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