论文标题

2D铁磁材料Fe3gete2中旋转簇玻璃状态的增强和出现

Enhanced coercivity and emergence of spin cluster glass state in 2D ferromagnetic material Fe3GeTe2

论文作者

Bera, Satyabrata, Pradhan, Suman Kalyan, Pal, Riju, Pal, Buddhadeb, Bera, Arnab, Kalimuddin, Sk, Das, Manjil, Roy, Deep Singha, Afzal, Hasan, Pal, Atindra Nath, Mondal, Mintu

论文摘要

二维(2D)Van der Waals(VDW)具有较高的牢固性和高$ T_ \ Text {C} $的磁性材料是Spintronics和Memory Storage应用程序的。 Fe $ _3 $ gete $ _2 $(F3GT)就是这样的2D VDW Ferromagnet,具有相当高的$ t_ \ text {C} $,但具有非常低的强制性领域,$ h_ \ text {c} $($ \ \ \ \ \ \ \ \ \ \ flowsim $ 100〜oe)。增强$ h_ \ text {c} $的一些常见技术是引入固定中心,缺陷,压力,掺杂等。它们涉及其他重要磁性特性不良改变的风险。在这里,我们通过改变样品生长条件来大大提高样品的内在胁迫性(7-10次),而不会损害其基本磁性($ T_ \ t_ \ text {c} \ simeq $ 2100k),从而提出了一种非常简单,健壮且高效的相工程方法。相工程样品(F3GT-2)由父型F3GT相组成,其中一小部分的共浮标(FT)相的随机嵌入簇。 FT阶段是在其抗铁磁过渡温度($ t_ \ text {c1} \ sim $ 70〜K)上的F3GT晶粒之间的两个镶嵌中心,也是$ T_ \ t_t_ \ text {c1} $的反相域。结果,晶界障碍和亚稳性的性质大大增加,导致高度增强的强化,簇自旋玻璃和元磁性行为。增强的强制性($ \ simeq $ 1〜KOE)使F3GT-2对内存存储应用程序更有用,并且很可能阐明了一条新的途径来调整有用的磁性属性。此外,此方法比异性结构和其他繁琐的技术更方便。

Two-dimensional (2D) van der Waals (vdW) magnetic materials with high coercivity and high $T_\text{C}$ are desired for spintronics and memory storage applications. Fe$_3$GeTe$_2$ (F3GT) is one such 2D vdW ferromagnet with a reasonably high $T_\text{C}$, but with a very low coercive field, $H_\text{c}$ ($\lesssim$100~Oe). Some of the common techniques of enhancing $H_\text{c}$ are by introducing pinning centers, defects, stress, doping, etc. They involve the risk of undesirable alteration of other important magnetic properties. Here we propose a very easy, robust, and highly effective method of phase engineering by altering the sample growth conditions to greatly enhance the intrinsic coercivity (7-10 times) of the sample, without compromising its fundamental magnetic properties ($T_\text{C}\simeq$210K). The phase-engineered sample (F3GT-2) comprises of parent F3GT phase with a small percentage of randomly embedded clusters of a coplanar FeTe (FT) phase. The FT phase serves as both mosaic pinning centers between grains of F3GT above its antiferromagnetic transition temperature ($T_\text{C1}\sim$70~K) and also as anti-phase domains below $T_\text{C1}$. As a result, the grain boundary disorder and metastable nature are greatly augmented, leading to highly enhanced coercivity, cluster spin glass, and meta-magnetic behavior. The enhanced coercivity ($\simeq$1~kOe) makes F3GT-2 much more useful for memory storage applications and is likely to elucidate a new route to tune useful magnetic properties. Moreover, this method is much more convenient than hetero-structure and other cumbersome techniques.

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