论文标题
MNBI2TE4薄膜的磁性和拓扑特性的非挥发性电控制
Non-volatile Electric Control of Magnetic and Topological Properties of MnBi2Te4 Thin Films
论文作者
论文摘要
在这封信中，我们提出了一种通过使用磁性耦合来控制拓扑量子材料（TQM）的磁性特性的机制：该机制使用TQM的异质结构与二维（2D）铁电材料的异质结构，可以通过更改磁性顺序，通过更改磁性顺序，通过改变磁性的磁性，通过更具层次的层次介绍可能的拓扑材料和指标。使用双层MNBI2TE4在2SE3或IN2TE3上的双层MNBI2TE4的示例来证明了这一概念，其中2D铁电的极化方向确定了界面谱带比对，因此是电荷转移的方向。反过来，这种电荷转移增强了MNBI2TE4的铁磁状态的稳定性，并导致量子异常霍尔（QAH）效应与零高原QAH之间可能发生拓扑相变。我们的工作提供了动态改变TQM的磁顺序的途径，并可能导致发现新的多功能拓扑异质结构。
In this letter, we propose a mechanism to control the magnetic properties of topological quantum material (TQM) by using magnetoelectric coupling: this mechanism uses a heterostructure of TQM with two-dimensional (2D) ferroelectric material, which can dynamically control the magnetic order by changing the polarization of the ferroelectric material and induce possible topological phase transitions. This concept is demonstrated using the example of the bilayer MnBi2Te4 on ferroelectric In2Se3 or In2Te3, where the polarization direction of the 2D ferroelectrics determines the interfacial band alignment and consequently the direction of the charge transfer. This charge transfer, in turn, enhances the stability of the ferromagnetic state of MnBi2Te4 and leads to a possible topological phase transition between the quantum anomalous Hall (QAH) effect and the zero plateau QAH. Our work provides a route to dynamically alter the magnetic ordering of TQMs and could lead to the discovery of new multifunctional topological heterostructures.
